By Topic

Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
De Wolf, I. ; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium ; Ignat, Michel ; Pozza, Georges ; Maniguet, Laurent
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The mechanical stresses in tungsten lines on a silicon substrate were determined by x-ray diffraction (XRD). The stresses are found to be plane and tensile. The stresses induced in the silicon substrate are compressive under the lines, but tensile in between the lines. This stress state in the silicon substrate was studied by micro-Raman spectroscopy (μRS). A good correlation is found between the XRD results and the μRS results. The stresses determined by XRD and μRS were compared to the stresses calculated using two analytical models and a numerical approach. The best fit to the experimental results was obtained when using the distributed edge force model. It is shown that the combination of both XRD and μRS provides a useful way to test the validity of the assumptions which are used in the stress models. © 1999 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 9 )