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The kinetics for dissolution/growth of defects in Czochralski silicon wafers during a 1 h high temperature annealing at 1100 °C has been investigated. The size and distribution of point defects such as vacancy, self-interstitial and oxygen interstitial, are simulated for oxygen and hydrogen ambient annealing. The boundary conditions are analyzed separately for hydrogen and oxygen annealing. A deterministic homogeneous model is used for describing the defect kinetics. The self-interstitial injection rate during oxide annealing is calculated from the Deal-Grove model. Simulated void and oxygen size distributions are compared to B- and C-mode capacitor failure distribution functions. Experimental and theoretical data show that voids can be dissolved during either oxygen or hydrogen annealing, while oxygen precipitates are dissolved during hydrogen annealing and only partially dissolved during oxygen annealing. © 1999 American Institute of Physics.