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High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

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4 Author(s)
Liu, H.C. ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Li, Jianmeng ; Buchanan, M. ; Wasilewski, Z.R.

We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 6 )