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1.3-μm strained MQW-DFB lasers with extremely low intermodulation distortion for high-speed analog transmission

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4 Author(s)
H. Watanabe ; Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo ; T. Aoyagi ; A. Takemoto ; B. Omura

The intermodulation distortion and the noise characteristics of 1.3-μm strained multiquantum-well distributed feedback (MQW-DFB) lasers have been investigated under the modulation frequency of 1.9 GHz in connection with the device structure. In this study, a strained MQW with strain-compensated layers has been introduced in order to increase in the quantum-well number and well width. This causes increase in the differential gain, resulting in increase of the resonance frequency (FR). The FR as high as 5.1 GHz/mW1/2 has been obtained which is in good agreement with the theoretical calculation. In addition to the strained MQW structure, a new buried heterostructure entirely grown by MOCVD, named as FSBH (facet selective growth buried heterostructure), has been developed to minimize the leakage current which degrades L-I characteristics at high bias current causing the high distortion. The third-order-intermodulation distortion (IMD3) of -88 dBc and relative intensity noise (RIN) of -152 dB/Hz have been obtained under a two-tone test at 1.9 GHz. This suggests that this newly developed laser is quite suitable for high-speed-subcarrier multiplexing transmission

Published in:

IEEE Journal of Quantum Electronics  (Volume:32 ,  Issue: 6 )