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Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate

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4 Author(s)
Wong, Joyce ; Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125 ; Scherer, Axel ; Todorovic, Mladen ; Schultz, Sheldon

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In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate for future reading and writing of the columns as individual bits for high density information storage. We have used magnetic force microscopy and scanning magneto-resistance microscopy to characterize the resulting magnets. We find the columns more magnetically stable than previously achieved with magnets embedded in a SiO2 substrate. Such stability is necessary before further writing of perpendicular patterned media can be demonstrated. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 8 )