By Topic

Properties of pulsed laser deposited scandium-doped barium hexaferrite films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Oliver, S.A. ; Center for Electromagnetic Research, Northeastern University, Boston, Massachusetts 02115 ; Chen, M.L. ; Vittoria, C. ; Lubitz, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.370430 

The properties of thin films of BaScxFe12-xO19 (x=0.4) were determined by structural and magnetic measurements. Films were deposited by pulsed laser ablation deposition onto c-plane sapphire at oxygen pressures between 10 and 100 mTorr. X-ray diffraction measurements showed all films to be single-phase c-axis oriented hexaferrites with expanded c-axis lattice constants compared to x=0 films. Magnetometry measurements showed that all films had the easy axis (c-axis) normal to the film plane, with a mean saturation magnetization value of 3.8 kG. The mean uniaxial anisotropy field value was 10.6 kOe. This ability to adjust the uniaxial anisotropy field in hexaferrite films through selective substitution will be important for future planar microwave devices. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 8 )