Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a <111>, <110>, and <100> texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.