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Effects of gamma radiation on high-power infrared and visible laser diodes

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4 Author(s)
Hastings, M.C. ; Dept. of Mech. Eng., Ohio State Univ., Columbus, OH, USA ; Anderson, B.L. ; Bornain Chiu ; Holcomb, D.E.

The effects of gamma radiation on high-power semiconductor laser diodes were measured. While operating, five commercial near-infrared (785 nm, 60 mW) and six visible laser diodes (670 nm, 30 mW) were exposed to approximately 10 kGy at a relatively high dose rate (≈5 kGy/h). The far-field, output beam patterns were monitored during radiation and recovery, as well as the overall intensity (constant current mode) and the internal monitor photodiode current. The linear dimensions of the far-field beam patterns shrank in size by the end of radiation by 3%-20% for the IR lasers and 15%-20% for the visible. The ellipticity of the beams changed by -16% for the IR and +8% for the visible case. The intensity, as measured with an external camera, decreased during irradiation by a maximum of 2.7 dB for the visible laser and 2.5 dB for the infrared; however, the photodiode photocurrents changed by less than 1 dB. Both types of lasers recovered completely over several days. The near- and far-field patterns were examined both below and above threshold before and after radiation/recovery, with no evidence of defects or other gross changes

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )

Date of Publication:

Jun 1996

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