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Resonant tunneling field-effect transistor based on wave function shape modulation in quantum wires

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2 Author(s)
Khurgin, J.B. ; Department of ECE, Johns Hopkins University, Baltimore, Maryland 21218 ; Yang, D.

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We propose a new type of three-terminal tunneling device with gating action provided by the external field inducing the changes in the symmetry of electron wave functions. We evaluate the current–voltage characteristics, transconductance, and speed of the proposed device. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 6 )