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We report on a double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) for high power applications, where the bottom channel is formed by a GaN/AlGaN/GaN semiconductor–insulator–semiconductor structure. The band structure and the charge distribution are strongly influenced by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures. © 1999 American Institute of Physics.