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Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

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4 Author(s)
Palasantzas, G. ; Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES) and Department of Applied Physics, NEXT-Lab, Lorentzweg 1, 2628 CJ Delft, The Netherlands ; Ilge, B. ; De Nijs, J. ; Geerligs, L.J.

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We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and subsequent annealing. The STM tip was used to define depassivated lines (≪10 nm in width) by electron stimulated hydrogen desorption, and subsequently Co was deposited at a submonolayer coverage. Annealing of the substrate at 410 °C (just below hydrogen desorption) improves the structure of the wire due to silicidation, whereas the as-deposited wire is very granular (comparable to other materials in previous studies). © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 3 )

Date of Publication:

Feb 1999

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