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Anisotropy of thermal conductivity and energy-flux relaxation time of hot electrons in semiconductors

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4 Author(s)
Brunetti, R. ; Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 41100 Modena, Italy ; Golinelli, P. ; Rudan, M. ; Reggiani, L.

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In this article a theoretical and computational analysis of the hot-electron thermal conductivity and related quantities in semiconductors is given. Two types of anisotropy are analyzed: the first is related to the dependence of the thermal conductivity on the direction of an externally applied electric field; the second is associated to the difference between the longitudinal and transverse thermal conductivity (i.e., along the field direction and along a direction perpendicular to the field, respectively). Two theoretical approaches based on a set of generalized relaxation times or on a set of microscopic correlation functions are considered and compared. Numerical results are obtained using a Monte Carlo simulator for electrons in silicon at 77 and 300 K. This approach can be extended to other semiconductors of interest within a semiclassical approach where two-particle interactions are neglected. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 3 )