By Topic

Electron beam induced current and remote electron beam induced current assessment of chemical vapor deposited diamond films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Cremades, A. ; Departamento de Fı´sica de Materiales, Facultad de Fı´sicas, Universidad Complutense, Madrid 28040, Spain ; Piqueras, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In the present work, electron beam induced current (EBIC) has been applied to characterize several kinds of chemical vapor deposition diamond films. Regions of enhanced carrier recombination are detected in plan-view observations of thin films as well as in cross sections of thick films. Remote EBIC (REBIC) has been applied to obtain information about charged defects present in the samples. The dependence of EBIC and REBIC contrast on the contact configuration used, and on the observation conditions has been analyzed. Cathodoluminescence images of the same samples have been recorded for comparison. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 3 )