By Topic

Thermo-optical modulation at /spl lambda/=1.5 μm in an /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 μm. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 μm is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 7 )