Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Weinmann, R. ; Optelectron. Components Div., Alcatel Corp. Res. Centre, Stuttgart, Germany ; Baums, D. ; Cebulla, U. ; Haisch, H.
more authors

Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength range from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells. Both designs show 42-GHz modulation bandwidth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 7 )