By Topic

Formation of Si islands from amorphous thin films upon thermal annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wakayama, Yutaka ; Tanaka Solid Junction Project, ERATO, Japan Science and Technology Corporation, 1-1-1 Fukuura, Kanazawa-ku, Yokohama 236-0004, Japan ; Tagami, Takashi ; Tanaka, Shun-ichiro

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.370632 

The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 12 )