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Formation of Si islands from amorphous thin films upon thermal annealing

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3 Author(s)
Wakayama, Yutaka ; Tanaka Solid Junction Project, ERATO, Japan Science and Technology Corporation, 1-1-1 Fukuura, Kanazawa-ku, Yokohama 236-0004, Japan ; Tagami, Takashi ; Tanaka, Shun-ichiro

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The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 12 )