By Topic

Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Frost, F. ; Institut für Oberflächenmodifizierung, Permoserstrasse 15, D-04318 Leipzig, Germany ; Lippold, G. ; Schindler, A. ; Bigl, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.370685 

The modification of the structural and electronic properties of InAs and InSb surfaces induced by low-energy N2 and Ar ion beam etching (IBE) were investigated as a function ion energy (≤500 eV) using Raman spectroscopy. A drastic enhancement of the electron concentration in the near surface region of both materials independent of the ion energy and the process gas was observed. From Raman measurements in different polarization configurations it can be concluded that the electron accumulation observed after IBE is inherently related to the process-induced structural defects. The degree of structural damage and the carrier concentration in the near surface region increase for higher ion energies. By controlled, subsequent removal of the damaged surface layer using wet etching, the depth profile of the structural and electronic damage in InAs was determined. This procedure reveals that the structural and electronic damage extends about 100 nm into the material. Nevertheless, it can be recognized that the utilization of N2 as the etching gas is associated with a lower degree of damage and also a lower electron accumulation at the surface of both InAs and InSb. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 12 )