By Topic

Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Muller, B.H. ; Laboratorio Nazionale TASC–INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy ; Lantier, R. ; Sorba, L. ; Heun, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated the structural and optical properties of Zn0.85Cd0.15Se epilayers for blue optical emission on lattice-matched InxGa1-xAs buffer layers. Both the II–VI layers and the III–V buffers were grown by molecular beam epitaxy on GaAs(001) wafers. A parabolic In concentration profile within the graded-composition InxGa1-xAs buffers was selected to control strain relaxation and minimize the concentration of threading dislocations. Dislocation-free II–VI growth was readily achieved on the graded buffers, with a Rutherford backscattering yield ratio reduced by a factor of 3 and a deep-level emission intensity reduced by over two orders of magnitude relative to those observed following direct II–VI growth on GaAs. The surface morphology of the materials, however, was found to replicate the crosshatched pattern of the underlying InxGa1-xAs substrates. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 12 )