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Data are presented characterizing an individually addressable, multiwavelength 2×2 vertical-cavity surface-emitting laser array. The individual elements are fabricated on center-to-center spacings of 12 μm with the lasing wavelengths controlled through the selectively oxidized lateral device sizes. Devices sized 3.5, 3.0, 2.5, and 2.0 μm result in lasing wavelengths of 9608, 9598, 9587, and 9574 /spl Aring/, respectively. Continuous wave threshold currents of the four elements with decreasing device sizes are 240, 214, 187, and 169 μA, respectively.