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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

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8 Author(s)
Quintanilla, L. ; Departamento de Electricidad y Electrónica, Escuela Técnica Superior de Ingenieros de Telecomunicaciones, Campus “Miguel Delibes,” Universidad de Valladolid, 47011-Valladolid, Spain ; Pinacho, R. ; Enrı quez, L. ; Pelaez, R.
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The electrical characterization of a He ion implantation-induced deep level existing in fully implanted p+n InP junctions isolated by He bombardment has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep level transient spectroscopy (DLTS). Several emission characteristics of this trap were derived by the correlation between DLTS and capacitance–voltage transient technique. © 1999 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:85 ,  Issue: 11 )