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The band structures and optical gain in mid-infrared type II InAs/GaInSb/AlSb interband cascade lasers were investigated using an eight-band k∙p model. Threshold carrier densities with different electric fields were obtained at 80 and 300 K. Implications of the calculated results on device performance are discussed. © 1998 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:84
,
Issue:
9
)
Date of Publication: Nov 1998
- Page(s):
- 5357 - 5359
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.368789
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 1998
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