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Simulation of clustering and transient enhanced diffusion of boron in silicon

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1 Author(s)
Uematsu, M. ; NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

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We have simulated the postimplantation clustering and transient enhanced diffusion (TED) in boron profiles with peak concentrations below the boron (B) solubility limit. First, we derive an analytical formula for B clustering in terms of the reaction between B atoms and supersaturated self-interstitials. Then, using this formula and taking into account the dissolution of B clusters to emit self-interstitials, a unified simulation is done with just three essential parameters for the B clusters and based on the self-interstitial cluster model and the B diffusion model. We have satisfactorily fitted B TED profiles not only for implanted B layers but also for initially active B layers. Moreover, a comparison with TED induced by P implantation is made in terms of the trapping and diffusivities of self-interstitials. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 9 )

Date of Publication:

Nov 1998

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