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Simulation of clustering and transient enhanced diffusion of boron in silicon

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1 Author(s)
Uematsu, M. ; NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.368720 

We have simulated the postimplantation clustering and transient enhanced diffusion (TED) in boron profiles with peak concentrations below the boron (B) solubility limit. First, we derive an analytical formula for B clustering in terms of the reaction between B atoms and supersaturated self-interstitials. Then, using this formula and taking into account the dissolution of B clusters to emit self-interstitials, a unified simulation is done with just three essential parameters for the B clusters and based on the self-interstitial cluster model and the B diffusion model. We have satisfactorily fitted B TED profiles not only for implanted B layers but also for initially active B layers. Moreover, a comparison with TED induced by P implantation is made in terms of the trapping and diffusivities of self-interstitials. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 9 )

Date of Publication:

Nov 1998

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