By Topic

Passivation properties of the local oxidation of silicon–oxide/Si interface defects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Fujieda, S. ; Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan ; Nobusawa, Hajime ; Hamada, Masayuki ; Tanigawa, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.368386 

The passivation properties of the local oxidation of silicon (LOCOS) oxide/Si interface defects were investigated by reverse current measurement and capacitance transient spectroscopy of pn junction diodes that had a large LOCOS-defined perimeter. The LOCOS/Si interface defects had some properties similar to those of the SiO2/Si(100) interface states of metal–oxide–silicon (MOS) diodes. However, there was a significant difference between the two interfaces in the rate of unpassivated defects remaining after H2 annealing: this rate was higher for the LOCOS/Si interface than for the MOS interface. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 5 )