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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:84 Issue:4 Help

Effect of processing conditions on the growth of strained Si1-XGeX layers on Si

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2 Author(s)
Suh, K.Y. ; Department of Chemical Engineering And Nanoelectronics Institute, Seoul National University, Seoul 151-742, Korea ; Lee, Hong H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.368347 

We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-XGeX films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition–temperature and composition–pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily. © 1998 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:84 ,  Issue: 4 )

Date of Publication: Aug 1998

Page(s):
2361 - 2363
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.368347
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Aug 1998

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