Cart (Loading....) | Create Account
Close category search window

How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Daudin, B. ; Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SPMM, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ; Feuillet, G. ; Hubner, J. ; Samson, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Molecular beam epitaxy (MBE) of cubic GaN on SiC films deposited by chemical vapor deposition on Si has been investigated by reflection high-energy electron diffraction, x-ray diffraction, photoluminescence, and micro-Raman spectroscopy. The wurtzite/zinc-blende ratio, indicative of the material quality, has been found to depend on both the initial substrate roughness and the N/metal ratio impinging on the surface. The results were consistently analyzed by assuming that the MBE growth of cubic GaN is mainly governed by the impinging active N flux, which directly determines the mean-free path of Ga adatoms. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 4 )

Date of Publication:

Aug 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.