Cart (Loading....) | Create Account
Close category search window
 

Role of space charge in scanned probe oxidation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Dagata, J.A. ; National Institute of Standards and Technology, Gaithersburg, Maryland 20899 ; Inoue, T. ; Itoh, J. ; Matsumoto, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.368986 

The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process. Simultaneous topographical, capacitance, and surface potential data are obtained for oxide features patterned on n- and p-type silicon and titanium thin-film substrates. The electric field established by an applied voltage pulse between the probe tip and substrate depends upon reactant and product ion concentrations associated with the water meniscus at the tip-substrate junction and within the growing oxide film. Space-charge effects are consistent with the rapid decline of high initial growth rates, account for observed doping and voltage-pulse dependencies, and provide a basis for understanding local density variations within oxide features. An obvious method for avoiding the buildup of space charge is to employ voltage modulation and other dynamic pulse-shaping techniques during the oxidation pulse. Voltage modulation leads to a significant enhancement of the growth rate and to improvements in the aspect ratio compared with static voltage pulses. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 12 )

Date of Publication:

Dec 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.