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Artificial dielectrics: Nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix

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4 Author(s)
Vijayalakshmi, S. ; Optical Waveguide Laboratory, Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 ; Grebel, H. ; Iqbal, Z. ; White, C.W.

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The nonlinear optical properties of Si nanoclusters formed by ion implantation into an SiO2 glassy matrix and followed by annealing have been studied at λ=532 nm and λ=355 nm by use of Z-scan and pump-probe techniques. These have been compared to the nonlinear properties of laser-ablated Si films. At relatively large intensities (≫1 MW/cm2), the absolute nonlinear values for these isolated nanoclusters were comparable to those obtained for laser-ablated samples although opposite in sign. Laser-ablated samples showed a much larger effect at relatively low intensities (≪1 MW/cm2), while the ion-implanted films showed almost none. Lifetime constants were in the range of 3–5 ns for all samples. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 12 )

Date of Publication:

Dec 1998

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