Referenced Items are not available for this document.
A new concept for an overvoltage self-protected thyristor was theoretically analyzed and the thyristor manufactured. Its breakover operation is basically a combination of punchthrough and avalanche phenomena. Temperature dependence of the original structure in this thyristor is 5% from 20 to 125°C. A second device which has a function to predict breakover voltage was also produced. The difference in temperature dependence of breakover voltage for both devices was investigated by an analytical model. Structures offering improved characteristics were proposed. The breakover voltage decrease of the developed structures at high temperature could be made equal to that of the original structure by a slight modification of the breakover region
Published in:
Electron Devices, IEEE Transactions on
(Volume:43
,
Issue:
6
)
Date of Publication: Jun 1996
- Page(s):
- 1000 - 1006
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5293987
- Digital Object Identifier :
- 10.1109/16.502136
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1996
- Sponsored by :
- IEEE Electron Devices Society
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