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Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel

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1 Author(s)
Han Dejun ; Inst. of Microelectron., Peking Univ., China

A novel lateral nonuniform doping technique, which is compatible with conventional ion implantation technology, is reported. GaAs MESFETs with a linear lateral doping channel have been fabricated and improvements in performance have been demonstrated.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 7 )