By Topic

Effect of annealing on the electrical and optical properties of GaAs/InGaP/n+InGaAs/GaAs epitaxial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Watanabe, Kazuo ; NTT System Electronics Laboratories, 3-1, Morinosato Wakamiya, Atsugishi, Kanagawa, 243-0198 Japan ; Hyuga, Fumiaki ; Nittono, Takumi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.368861 

Annealing effects on the electrical and optical characteristics of GaAs/InGaP/n+InGaAs:Si/GaAs epilayers grown on GaAs semi-insulating substrates by metal organic chemical vapor deposition have been investigated. This epilayer structure has been used for heterostructure metal–semiconductor field effect transistors. The carrier concentration is decreased and the mobility is increased by annealing at 700 °C or higher, suggesting the deactivation of Si donors in the n+InGaAs layers. With such annealing, the band-edge photoluminescence (PL) peak from the n+InGaAs layers becomes dramatically weak or disappears and deep level PL broad peaks around 1.2 and 1.5 μm appear instead. It is confirmed by the selectively excited PL that these peaks are from the n+InGaAs layer. The deep levels probably act as nonradiative recombination centers for the near band-edge PL and are attributed to Si complex levels created during the Si donor deactivation process. These levels have no relationship with the strain relaxation or dislocation generation. At 600 °C or lower, however, the carrier concentration, mobility, and PL spectra are hardly changed at all by annealing. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 10 )