Cart (Loading....) | Create Account
Close category search window

Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Deen, M.J. ; School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6 ; Rumyantsev, S. ; Bashir, R. ; Taylor, R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Low frequency noise characteristics of new high voltage, high performance complementary polysilicon emitter bipolar transistors have been studied. The influence of the base biasing resistance, emitter geometry, and temperature on the noise spectra are discussed. The npn transistors studied exhibited 1/f and shot noise. The pnp transistors, on the other hand, are characterized by significant generation-recombination noise contributions to the total noise. For both types of transistors, the measured output noise is determined primarily by the noise sources in the polysilicon–monosilicon interface. The level of the 1/f noise is proportional to the square of the base current (IB2) for both npn and pnp transistors. The contribution of the 1/f noise in the collector current is also estimated. The magnitude of the 1/f noise normalized to the square of the base current for devices with different emitter areas was found to be inversely proportional to the emitter area, but for the transistors with a large ratio of emitter perimeter to emitter area, the contribution of noise sources located in the emitter perimeter may be significant. For both pnp and npn transistors, 1/f noise was found to be independent of temperature, and for pnp transistors, generation-recombination noise decreases with increasing temperature. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:84 ,  Issue: 1 )

Date of Publication:

Jul 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.