Cart (Loading....) | Create Account
Close category search window

Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chaneliere, C. ; Laboratoire de Physique de la Matière, UMR CNRS 5511, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne Cedex, France ; Four, S. ; Autran, J.L. ; Devine, R.A.B.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this work, the structural and electrical properties of amorphous and crystalline Ta2O5 thin films deposited on p-type Si substrates by low-pressure chemical vapor deposition from a Ta(OC2H5)5 precursor have been investigated. The as-deposited layers are amorphous, whereas crystalline Ta2O5 was obtained after postdeposition O2 treatment at 800 °C. As evidenced by x-ray diffraction, a hexagonal structure was obtained in the latter case. Physicochemical analysis of our layers shows that the O2-annealing step leads to the growth of a thin (∼1 nm) interfacial SiO2 layer but was not sufficient to reduce the level of hydrocarbon contamination. The dominant conduction mechanism in amorphous Ta2O5 is clearly due to the Poole–Frenkel effect, whereas the situation remains unclear for crystalline Ta2O5 for which no simple law can be invoked to correctly describe its conduction properties. From capacitance–voltage measurements, the dielectric constant was found to be ∼25 for amorphous samples, but values ranging from 56–59 were found for crystalline layers, suggesting a particularly high anisotropic character of the crystalline phas- e. Finally, the effects of postdeposition annealing in N2 and forming gas at 425 °C have been investigated for both types of films. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 9 )

Date of Publication:

May 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.