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Lateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices

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8 Author(s)
Galeckas, A. ; Institute of Material Science and Applied Research, Vilnius University, LT-2040 Vilnius, Lithuania ; Juodkazis, S. ; Vanagas, E. ; Netiksis, V.
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Picosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 1017–1020cm-3 density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm2/s at room temperature, respectively. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 9 )

Date of Publication:

May 1998

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