Cart (Loading....) | Create Account
Close category search window
 

Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field effect transistor: A charge control model study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhang, Yifei ; Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 ; Singh, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367184 

We present results of a numerical formalism developed to address the band structure and charge control problem in n- and p-type silicon and silicon-germanium metal-oxide-semiconductor field effect transistors. We focus on the following issues: (i) the dependence of the in-plane carrier effective mass on sheet charge density and germanium content; (ii) the fraction of charge near the interface and the evaluation of the interface roughness matrix element. Results are compared to existing models. For n-type structure, the effective mass approximation and deformation potential theory is used to describe the electron states. However, for p-type structure, a six-band k∙p Kohn–Luttinger formulation is used to describe the hole states due to the strong coupling of heavy-hole, light-hole, and split-off bands. This allows us to examine the influence of the coupling of the heavy-hole, light-hole, and the split-off bands. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 8 )

Date of Publication:

Apr 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.