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Comment on “Amorphization and defect recombination in ion implanted silicon carbide” [J. Appl. Phys. 81, 7181 (1997)]

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1 Author(s)
Heera, V. ; Forschungszentrum Rossendorf, P.O.B. 510 119, D-01314 Dresden, Germany

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It is demonstrated that the simplified analysis of Rutherford backscatteringchanneling data on damage production in SiC performed by Grimaldi etal [J. Appl. Phys. 81, 7181 (1997)] cannot be used to calculate the atomic displacement energy. The value of 12 eV at which the authors arrive is much too small. Moreover, their conclusion of similar displacement energies in Si and SiC is essentially wrong. The general reasons for that are discussed and illustrated by an example. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 7 )

Date of Publication:

Apr 1998

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