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Monte Carlo simulation of an amorphous hydrogenated silicon film deposition from a gas jet activated by an electron beam

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3 Author(s)
Vasenkov, A.V. ; Institute of Thermophysics, Novosibirsk 630090, Russia ; Sharafutdinov, R.G. ; Skrinnikov, A.V.

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A Monte Carlo hybrid model was developed to simulate film deposition from a gas jet activated by an electron beam. This model includes calculation of the interaction of an electron beam with a gas jet and the transport of particles from the activation zone to the substrate. In the first stage, the three-dimensional distribution of monosilane’s dissociation rate in a mixture of Ar with 10% SiH4 was determined. Using this distribution, absolute deposition rates for an amorphous hydrogenated silicon film were calculated and they compared favorably with experimental data. © 1998 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 7 )

Date of Publication:

Apr 1998

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