Cart (Loading....) | Create Account
Close category search window
 

Monte Carlo simulation of an amorphous hydrogenated silicon film deposition from a gas jet activated by an electron beam

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Vasenkov, A.V. ; Institute of Thermophysics, Novosibirsk 630090, Russia ; Sharafutdinov, R.G. ; Skrinnikov, A.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367142 

A Monte Carlo hybrid model was developed to simulate film deposition from a gas jet activated by an electron beam. This model includes calculation of the interaction of an electron beam with a gas jet and the transport of particles from the activation zone to the substrate. In the first stage, the three-dimensional distribution of monosilane’s dissociation rate in a mixture of Ar with 10% SiH4 was determined. Using this distribution, absolute deposition rates for an amorphous hydrogenated silicon film were calculated and they compared favorably with experimental data. © 1998 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 7 )

Date of Publication:

Apr 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.