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Observation of near-surface electrically active defects in n-type 6HSiC

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8 Author(s)
Doyle, J.P. ; Royal Institute of Technology, Solid State Electronics, Electrum 229 S-164 40, Kista-Stockholm, Sweden ; Schoner, A. ; Nordell, N. ; Galeckas, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367147 

In n-type 6H–SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1×10-13cm-3, a region near the front surface contains defects with concentrations approaching 1014cm-3. A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1×1016cm-3 in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 7 )

Date of Publication:

Apr 1998

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