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The directionality of quantum confinement on strain-induced quantum-wire lasers

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4 Author(s)
Chou, S.T. ; Department of Electrical Engineering, Chung Cheng Institute of Technology, Tahsi, Taoyuan 33509, Taiwan, Republic of China ; Wohlert, D.E. ; Cheng, K.Y. ; Hsieh, K.C.

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Optical properties of Ga0.47-xIn0.53+xAs (x∼0.14) multiple-quantum-wire (MQWR) lasers prepared by the strain-induced lateral-layer ordering process were studied. A typical ratio of threshold current density, ∼10, was observed from the GaInAs MQWR lasers with contact stripes aligned to the [110] ([110] MQWR laser) and the [1¯10] ([1¯10] MQWR laser) directions. The threshold current density of the [110] MQWR laser is ∼30% lower than that of a Ga0.47In0.53As multiple-quantum-well (MQW) reference laser. The 77 K lasing wavelengths were 1.46, 1.57, and 1.69 μm for the MQW laser, the [1¯10] and [110] MQWR lasers, respectively. This strong anisotropy of threshold current densities and lasing wavelengths is the first direct evidence of the directionality of two-dimensional quantum confinement in the MQWR structure. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 7 )