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An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization

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7 Author(s)
Takahashi, M. ; ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan ; Vaccaro, P. ; Fujita, K. ; Watanabe, T.
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We have fabricated an InGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs(311)A substrate by molecular beam epitaxy (MBE) and demonstrated continuous wave operation at room temperature. A threshold current density of 80 A/cm/sup 2//well and very stable polarization characteristics up to 2.7 times the threshold were achieved. The polarization state with the highest optical intensity was oriented along the [2~33] direction, which is the crystallographic axis exhibiting the maximum gain. An extinction ratio of more than 12.7 dB was obtained between two orthogonal polarization states. The high and anisotropic gain of a (311)A-oriented VCSEL will drastically improve the device performance by optimization and process engineering.

Published in:

Photonics Technology Letters, IEEE  (Volume:8 ,  Issue: 6 )

Date of Publication:

June 1996

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