By Topic

Electron spin resonance features of interface defects in thermal (100)Si/SiO2

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Stesmans, A. ; Department of Physics, University of Leuven, 3001 Leuven, Belgium ; Afanasev, V.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367005 

Electron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1=2.0058, g2=2.00 735±0.00 010, and g3=2.0022, where the g2 direction is at 3°±1° (towards the interface) with a <111> direction at 35.3° with the interface plane. Its line width is found weakly dependent on magnet angle, exhibiting a strain induced spread σg∼0.00 035 in g about 2–3 times less than typical for Pb in (111)Si/SiO2. For Pb0, an axially symmetric g matrix is observed, with g||=2.0018 and g=2.0081, and σg∼0.0009. From comparison of salient ESR data, it is concluded that Pb and Pb0 are chemically identical; however, systematic fabrication-induced variations in defect environment will lead to second order systematic shifts in average properties. The Pb1 defect is provisionally pictured as an unpaired Si bond on a defect Si atom at slightly subinterface plane position in the Si substrate, possibly facing an oxygen atom. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 5 )