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Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond

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4 Author(s)
Wu, Kehui ; State Key Laboratory for Surface Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Post Office Box 603, Beijing 100080, China ; Wang, E.G. ; Qing, Jian ; Xu, Guichang

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Carbon nitride films were prepared using an electron cyclotron resonance enhanced chemical vapor deposition apparatus. A two-step mode was adopted in which a diamond layer was first deposited onto the substrate (Si or Mo), and then the carbon nitride films were grown. Detailed x-ray photoelectron analyses show that the carbon and nitrogen atoms have formed a nonpolar covalent bond. The nitrogen concentrations in the films remain unchanged when the substrate temperatures vary from 100 to 700 °C, which suggests that a stable phase has formed. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 3 )

Date of Publication:

Feb 1998

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