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Diffusion of gold in silicon during rapid thermal annealing: Effectiveness of the surface as a sink for self-interstitials

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2 Author(s)
Lerch, W. ; Institut für Metallforschung, Universität Münster, Wilhelm-Klemm Strasse. 10, D-48149 Münster, Germany ; Stolwijk, N.A.

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Rapid thermal annealing was used for short-time diffusion experiments of gold in dislocation-free floating-zone silicon of {100} orientation at 1050 °C and 1119 °C. Concentration-depth profiles measured by the spreading-resistance technique are well described within the framework of the kick-out mechanism involving generation of silicon self-interstitials. More specifically, the gold-incorporation rate appears to be controlled by the outdiffusion of excess self-interstitials towards the surfaces. As a special feature, the measurements reveal a continuous increase of the gold boundary concentration which approaches the pertaining solubility limit only after prolonged annealing. This can be interpreted in terms of a limited effectiveness of gold-alloyed {100} silicon surfaces as sinks for self-interstitials. The validity of this interpretation is supported by computer modeling of the experimental data yielding finite values for the self-interstitial surface-annihilation velocity. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 3 )