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X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1-xAs

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5 Author(s)
Partyka, P. ; Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 ; Averback, R.S. ; Forbes, D.V. ; Coleman, J.J.
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X-ray diffraction and channeling-Rutherford backscattering spectrometry (RBS) were employed to investigate damage accumulation in AlxGa1-xAs (x=0.50, 0.75, 0.85, and 1.0) irradiated at 80 K with MeV ions. The x-ray measurements, performed both before and after warming the samples, showed a transition in the strain accumulation behavior as the Al content increased. For samples with low Al content, x=0.50, the strain increased monotonically with fluence until the sample amorphized, a behavior similar to GaAs. For samples with x≥0.75, the strain initially increased, then plateaued, and finally diminished at high fluences. The RBS data, obtained at both 80 K and room temperature, revealed a similar dependence of the amorphization behavior upon Al content. For pure AlAs films, amorphization in the bulk was not observed even after a fluence of 2×1017cm2 of 1.7 MeV Ar+. For films with low Al content, however, the AlxGa1-xAs layer readily amorphized with a fluence of only 6.8×1014cm2 of 1.7 MeV Ar+. From these data, along with previously published information provided by transmission electron microscopy studies, a model for damage accumulation in ion irradiated AlxGa1-xAs is proposed. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 3 )

Date of Publication:

Feb 1998

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