Cart (Loading....) | Create Account
Close category search window

Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Fuke, Shunro ; Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan ; Teshigawara, Hidekazu ; Kuwahara, Kazuhiro ; Takano, Yasushi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Hexagonal GaN is grown on (0001) sapphire substrates using an atmospheric pressure organometallic vapor phase epitaxy method. We investigate the influences of the initial treatment of sapphire substrate, such as initial nitridation and low-temperature GaN buffer layer deposition, upon the surface morphology and crystallinity. The thermal stability of grown GaN layers is also investigated using a thermal etching process in a H2 atmosphere in order to obtain the information concerning the surface polarity of GaN(0001) layers. When sapphire substrates are initially nitrided, highly crystalline GaN layers with large hexagonal facets are obtained and its surface appears to be (0001)N. On the other hand, the deposition of a thicker buffer layer on the nitrided sapphire substrates improves the surface morphology, and the surface polarity of the mirror surface appears to be (0001)Ga. The initial nitridation of sapphire substrates and the GaN buffer layer deposition are considered to be important processes from viewpoints of the (0001) surface polarity. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 2 )

Date of Publication:

Jan 1998

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.