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Atomic structure and phase transitions in disordered Ti1-xGaxN thin films grown by pulsed laser deposition

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5 Author(s)
Ren, Jian Z. ; Department of Chemistry and Biochemistry, University of California at Los Angeles, Los Angeles, California 90095 ; Rose, Garry A. ; Williams, R.Stanley ; Booth, Corwin H.
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We report here the growth by pulsed laser deposition and characterization of metastable disordered Ti1-xGaxN alloy thin films on Al2O3(0001) substrates. X-ray diffraction and x-ray-absorption fine-structure analyses showed that the films contained a single rocksaltlike atomic structure for 0≤ x≪0.45, a single wurtzite-like structure for 0.75≤x≤1, and a mixture of both structures for 0.45≤x≪0.75. Over most of the composition range, the alloy films were predominantly amorphous with some fraction of nanocrystalline material present. Electrical conductivity measurements showed that the structural transition near x≈0.5 is accompanied by a metal–insulator transition. This study provides an increased understanding of the TiN–GaN pseudobinary phase field, which has potential technological implications for metallic contacts to GaN devices. © 1998 American Institute of Physics.

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Journal of Applied Physics  (Volume:83 ,  Issue: 12 )