Cart (Loading....) | Create Account
Close category search window
 

Magnetic and structural properties of epitaxially grown FeTaN thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Varga, L. ; Center for Materials for Information Technology, Department of Physics and Astronomy, University of Alabama, P.O. Box 870202, Tuscaloosa, Alabama 35487 ; Jiang, H. ; Klemmer, T.J. ; Doyle, W.D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367460 

Epitaxial FeTaN films (∼1500 Å) were grown as a function of nitrogen flow rate on epitaxial Cu(001) buffer layers (∼2000 Å) on Si(001) single crystal substrates to investigate the effect of Ta and nitrogen on the magnetocrystalline anisotropy and magnetostriction. Detailed structural investigation by transmission electron microscopy and x-ray diffraction showed that the FeTaN films were epitaxial with the Pitsch orientation relationship of FeTaN(110)||Cu(001) and FeTaN<111>||Cu<110>, which allows four different in-plane variants to coexist in the film. It was found that the saturation magnetization did not change with nitrogen addition (∼1600 emu/cc) up to 2% lattice dilation. The values of K1 and λ100 of Fe decreased slightly (20% and 10%, respectively), while λ111 increased with increasing nitrogen content and eventually changed sign at ∼2% normalized lattice dilation. These results qualitatively agree with our earlier findings on (001) oriented FeTaN epitaxial films on MgO single crystal substrates. Also, our calculated saturation magnetostriction for nanocrystalline samples agrees very well with published data on the same FeTaN composition. Based on Hoffmann’s ripple theory the ripple constant is calculated for nanocrystalline films using the Doyle–Finnegan model for the local average anisotropy and our measured single crystal constants. It was found that the effect of nitrogen on reducing the average anisotropy through the fundamental constants is not significant, and therefore the major factor in achieving a low ripple constant (i.e., soft magnetic properties) is the grain size, the number of grains across the thickness and the thin film stress. © 1998 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 11 )

Date of Publication:

Jun 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.