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Growth and small polaron properties of epitaxial La1-xCaxMnO3 thin films

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3 Author(s)
Worledge, D.C. ; E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085 ; Mieville, L. ; Geballe, T.H.

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We report on the epitaxial growth and properties of La1-xCaxMnO3 thin films deposited by pulsed laser ablation. We grew and characterized 11 thin films covering the entire doping range, from x=0 to x=1. A presence of oxygen during postdeposition annealing is shown to be required in order to reduce the resistivity of the samples and to obtain reproducible samples. The lattice constant and phonon frequency that appear in the Emin–Holstein, [D. Emin and T. Holstein, Ann. Phys. 53, 439 (1969).] adiabatic small polaron conductivity formula are reported. Resistivity data from 20 to 300 K are also reported. © 1998 American Institute of Physics.

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Journal of Applied Physics  (Volume:83 ,  Issue: 11 )