By Topic

Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jung, H.D. ; Institute for Materials Research, Tohoku University, Sendai 980-77, Japan ; Kumagai, N. ; Hanada, T. ; Zhu, Z.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.367409 

Nitridation processes on GaAs(001) surfaces exposed to plasma-activated N2 were investigated by employing in situ reflectance-difference spectroscopy, reflection high-energy electron diffraction, and in-line Auger electron spectroscopy. We have found that a stable GaN layer is formed only when the As background pressure in the growth chamber is sufficiently low. Nitridation is significantly suppressed under a high background pressure of As. A possible mechanism of this effect and its implication to cubic-GaN growth on GaAs surfaces are discussed. Surface roughening induced by extensive nitridation is also discussed. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 10 )