By Topic

Use of real-time photoluminescence and low-power electron cyclotron resonance hydrogen plasma for passivation of SiN–InP interfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Malhotra, V. ; Optoelectronics Research Laboratory, Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, Hawaii 96822 ; Kapila, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.366642 

Passivation of InP surfaces have been achieved using low-power (∼50 W) electron cyclotron resonance (ECR) hydrogen plasmas and SiNx overlayers. The nitride layers are deposited at room temperature using a ECR plasma-enhanced chemical vapor deposition technique. In situ, real-time photoluminescence measurement is used to monitor the InP surface during H plasma treatment. It is observed that a 30 s “flash” ECR H plasma treatment of InP surface helps fabrication of passivated SiNxInP interfaces with a low density of interfacial defects. © 1998 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:83 ,  Issue: 1 )