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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:82 Issue:8 Help

Optical studies of carrier kinetics in a type II multiple quantum well hetero-n-i-p-i structure

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3 Author(s)
Yang, Zhenyin Jean ; Center for Laser Studies, DRB 17, University of Southern California, Los Angeles, California 90089-1112 ; Garmire, Elsa M. ; Doctor, Daniel

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.365690 

In this paper, carrier kinetics in a type II multiple quantum well hetero-n-doped-intrinsic–p-doped-intrinsic are studied through optical measurements under continuous illumination. Both field measurement by photoreflectance and time measurement confirmed our hypothesis that the recombination time is a function not only of photocarrier density, but also of photocarrier distribution. A simple model is used for recombination time, assuming exponential dependence on the barrier height and nearest distance between recombining carriers. Quantum efficiency has also been determined. © 1997 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:82 ,  Issue: 8 )

Date of Publication: Oct 1997

Page(s):
3874 - 3880
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.365690
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 1997

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